2017-2018 Microchip Technology Inc. DS20005745B-page 1
DSC1103/23
Features
• Low RMS Phase Jitter: <1 ps (typ.)
• High Stability: ±10 ppm, ±20 ppm, ±25 ppm,
±50 ppm
• Wide Temperature Range:
- Ext. Industrial –40°C to +105°C
- Industrial –40°C to +85°C
- Ext. Commercial –20°C to +70°C
• High Supply Noise Rejection: –50 dBc
• Wide Frequency Range:
- 2.3 MHz – 460 MHz
• Small Industry Standard Footprints
- 2.5 mm x 2.0 mm
- 3.2 mm x 2.5 mm
- 5.0 mm x 3.2 mm
- 7.0 mm x 5.0 mm
• Excellent Shock and Vibration Immunity
- Qualified to MIL-STD-883
• High Reliability
- 20x better MTF than quartz-based devices
• Low Current Consumption
• Supply Range of 2.25V to 3.63V
• Standby and Output Enable Functions
• Lead Free and RoHS-Compliant
Applications
• Storage Area Networks
- SATA, SAS, Fibre Channel
• Passive Optical Networks
- EPON, 10G-EPON, GPON, 10G-PON
• HD/SD/SDI Video and Surveillance
• PCI Express Gen 1/Gen 2/Gen 3
• Display Port
General Description
The DSC1103 and DSC1123 series of high
performance oscillators utilizes a proven silicon MEMS
technology to provide excellent jitter and stability over
a wide range of supply voltages and temperatures. By
eliminating the need for quartz or SAW technology,
MEMS oscillators significantly enhance reliability and
accelerate product development, while meeting
stringent clock performance criteria for a variety of
communications, storage, and networking applications.
DSC1103 has a standby feature allowing it to
completely power-down when EN pin is pulled low. For
DSC1123, only the outputs are disabled when EN is
low. Both oscillators are available in industry standard
packages, including the smallest 2.5 mm x 2.0 mm,
and are drop-in replacements for standard 6-pin LVDS
crystal oscillators.
Block Diagram
Pin 6
V DD
Pin 1
Enable
Pin 4
Output
Pin 3
GND
Divider
Driver
MEMS
Oscillator PLL
Temp. Sensor &
Compensation
Circuitry
Pin 2
NC
Pin 5
Output
Low-Jitter Precision LVDS Oscillator
DSC1103/23
Features
• Low RMS Phase Jitter: <1 ps (typ.)
• High Stability: ±10 ppm, ±20 ppm, ±25 ppm,
±50 ppm
• Wide Temperature Range:
- Ext. Industrial –40°C to +105°C
- Industrial –40°C to +85°C
- Ext. Commercial –20°C to +70°C
• High Supply Noise Rejection: –50 dBc
• Wide Frequency Range:
- 2.3 MHz – 460 MHz
• Small Industry Standard Footprints
- 2.5 mm x 2.0 mm
- 3.2 mm x 2.5 mm
- 5.0 mm x 3.2 mm
- 7.0 mm x 5.0 mm
• Excellent Shock and Vibration Immunity
- Qualified to MIL-STD-883
• High Reliability
- 20x better MTF than quartz-based devices
• Low Current Consumption
• Supply Range of 2.25V to 3.63V
• Standby and Output Enable Functions
• Lead Free and RoHS-Compliant
Applications
• Storage Area Networks
- SATA, SAS, Fibre Channel
• Passive Optical Networks
- EPON, 10G-EPON, GPON, 10G-PON
• HD/SD/SDI Video and Surveillance
• PCI Express Gen 1/Gen 2/Gen 3
• Display Port
General Description
The DSC1103 and DSC1123 series of high
performance oscillators utilizes a proven silicon MEMS
technology to provide excellent jitter and stability over
a wide range of supply voltages and temperatures. By
eliminating the need for quartz or SAW technology,
MEMS oscillators significantly enhance reliability and
accelerate product development, while meeting
stringent clock performance criteria for a variety of
communications, storage, and networking applications.
DSC1103 has a standby feature allowing it to
completely power-down when EN pin is pulled low. For
DSC1123, only the outputs are disabled when EN is
low. Both oscillators are available in industry standard
packages, including the smallest 2.5 mm x 2.0 mm,
and are drop-in replacements for standard 6-pin LVDS
crystal oscillators.
Block Diagram
Pin 6
V DD
Pin 1
Enable
Pin 4
Output
Pin 3
GND
Divider
Driver
MEMS
Oscillator PLL
Temp. Sensor &
Compensation
Circuitry
Pin 2
NC
Pin 5
Output
Low-Jitter Precision LVDS Oscillator
DSC1103/23
DS20005745B-page 2 2017-2018 Microchip Technology Inc.
1.0 ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage .......................................................................................................................................... –0.3V to +4.0V
Input Voltage .......................................................................................................................................–0.3V to VDD +0.3V
ESD Protection (HBM) ...............................................................................................................................................4 kV
ESD Protection (MM) ................................................................................................................................................400V
ESD Protection (CDM) ............................................................................................................................................1.5 kV
† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at those or any other conditions above those indicated
in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended
periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
Specifications: VDD = 3.3V; T A = +25°C unless otherwise specified.
Parameters Sym. Min. Typ. Max. Units Conditions
Supply Voltage (Note 1) VDD 2.25 — 3.63 V —
Supply Current I DD
— — 0.095
mA
DSC1103, EN pin low; all
outputs disabled.
— 20 22 DSC1123, EN pin low; all
outputs disabled.
Frequency Stability ∆f
— — ±10
ppm
Includes frequency
variations due to initial
tolerance, temp., and power
supply voltage.
— — ±20
— — ±25
— — ±50
Aging - First Year ∆f Y1 — — ±5 ppm One year at +25°C
Aging - After First Year ∆f Y2+ — — <±1 ppm/yr Year two and beyond at
+25°C
Start-up Time (Note 2) t SU — — 5 ms T = +25°C
Input Logic Levels VIH 0.75 x VDD — — V Input logic high
VIL — — 0.25 x V DD Input logic low
Output Disable Time (Note 3) t DA — — 5 ns —
Output Enable Time t EN
— — 5 ms DSC1103
— — 20 ns DSC1123
Enable Pull-Up Resistor
(Note 4) RPU — 40 — kΩ Pull-up resistor exist.
LVDS Outputs
Supply Current I DD — 29 32 mA Output enabled, R L = 100Ω
Output Offset Voltage VOS 1.125 — 1.4 V R = 100Ω Differential
Delta Offset Voltage ∆VOS — — 50 mV —
Peak-to-Peak Output Swing V PP — 350 — mV Single-Ended
Note 1: VDD pin should be filtered with a 0.1 μF capacitor.
2: t SU is time to 100 ppm stable output frequency after V DD is applied and outputs are enabled.
3: See the Output Waveform section and the Test Circuit for more information.
4: Output is enabled if pad is floated or not connected.
DS20005745B-page 2 2017-2018 Microchip Technology Inc.
1.0 ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings †
Supply Voltage .......................................................................................................................................... –0.3V to +4.0V
Input Voltage .......................................................................................................................................–0.3V to VDD +0.3V
ESD Protection (HBM) ...............................................................................................................................................4 kV
ESD Protection (MM) ................................................................................................................................................400V
ESD Protection (CDM) ............................................................................................................................................1.5 kV
† Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at those or any other conditions above those indicated
in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended
periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
Specifications: VDD = 3.3V; T A = +25°C unless otherwise specified.
Parameters Sym. Min. Typ. Max. Units Conditions
Supply Voltage (Note 1) VDD 2.25 — 3.63 V —
Supply Current I DD
— — 0.095
mA
DSC1103, EN pin low; all
outputs disabled.
— 20 22 DSC1123, EN pin low; all
outputs disabled.
Frequency Stability ∆f
— — ±10
ppm
Includes frequency
variations due to initial
tolerance, temp., and power
supply voltage.
— — ±20
— — ±25
— — ±50
Aging - First Year ∆f Y1 — — ±5 ppm One year at +25°C
Aging - After First Year ∆f Y2+ — — <±1 ppm/yr Year two and beyond at
+25°C
Start-up Time (Note 2) t SU — — 5 ms T = +25°C
Input Logic Levels VIH 0.75 x VDD — — V Input logic high
VIL — — 0.25 x V DD Input logic low
Output Disable Time (Note 3) t DA — — 5 ns —
Output Enable Time t EN
— — 5 ms DSC1103
— — 20 ns DSC1123
Enable Pull-Up Resistor
(Note 4) RPU — 40 — kΩ Pull-up resistor exist.
LVDS Outputs
Supply Current I DD — 29 32 mA Output enabled, R L = 100Ω
Output Offset Voltage VOS 1.125 — 1.4 V R = 100Ω Differential
Delta Offset Voltage ∆VOS — — 50 mV —
Peak-to-Peak Output Swing V PP — 350 — mV Single-Ended
Note 1: VDD pin should be filtered with a 0.1 μF capacitor.
2: t SU is time to 100 ppm stable output frequency after V DD is applied and outputs are enabled.
3: See the Output Waveform section and the Test Circuit for more information.
4: Output is enabled if pad is floated or not connected.
2017-2018 Microchip Technology Inc. DS20005745B-page 3
DSC1103/23
Output Transition Rise/Fall
Time (Note 3) tR /t F — 200 — ps 20% to 80%
RL = 50Ω, C L = 2 pF
Frequency f0
2.3 — 460 MHz
–20°C to +70°C &
–40°C to +85°C
3.3 — 460 –40°C to +105°C
Output Duty Cycle SYM 48 — 52 % Differential
Period Jitter J PER — 2.5 — psRMS —
Integrated Phase Noise J PH
— 0.28 —
psRMS
200 kHz to 20 MHz
@156.25 MHz
— 0.4 — 100 kHz to 20 MHz
@156.25 MHz
— 1.7 2 12 kHz to 20 MHz
@156.25 MHz
ELECTRICAL CHARACTERISTICS (CONTINUED)
Specifications: VDD = 3.3V; T A = +25°C unless otherwise specified.
Parameters Sym. Min. Typ. Max. Units Conditions
Note 1: VDD pin should be filtered with a 0.1 μF capacitor.
2: t SU is time to 100 ppm stable output frequency after V DD is applied and outputs are enabled.
3: See the Output Waveform section and the Test Circuit for more information.
4: Output is enabled if pad is floated or not connected.
DSC1103/23
Output Transition Rise/Fall
Time (Note 3) tR /t F — 200 — ps 20% to 80%
RL = 50Ω, C L = 2 pF
Frequency f0
2.3 — 460 MHz
–20°C to +70°C &
–40°C to +85°C
3.3 — 460 –40°C to +105°C
Output Duty Cycle SYM 48 — 52 % Differential
Period Jitter J PER — 2.5 — psRMS —
Integrated Phase Noise J PH
— 0.28 —
psRMS
200 kHz to 20 MHz
@156.25 MHz
— 0.4 — 100 kHz to 20 MHz
@156.25 MHz
— 1.7 2 12 kHz to 20 MHz
@156.25 MHz
ELECTRICAL CHARACTERISTICS (CONTINUED)
Specifications: VDD = 3.3V; T A = +25°C unless otherwise specified.
Parameters Sym. Min. Typ. Max. Units Conditions
Note 1: VDD pin should be filtered with a 0.1 μF capacitor.
2: t SU is time to 100 ppm stable output frequency after V DD is applied and outputs are enabled.
3: See the Output Waveform section and the Test Circuit for more information.
4: Output is enabled if pad is floated or not connected.
DSC1103/23
DS20005745B-page 4 2017-2018 Microchip Technology Inc.
TEMPERATURE SPECIFICATIONS (Note 1)
Parameters Sym. Min. Typ. Max. Units Conditions
Temperature Ranges
Operating Temperature Range
TA –20 — +70 °C Ordering Option E
TA –40 — +85 °C Ordering Option I
TA –40 — +105 °C Ordering Option L
Junction Temperature TJ — — +150 °C —
Storage Temperature Range T S –55 — +150 °C —
Soldering Temperature — — — +260 °C 40 sec. max.
Note 1: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable
junction temperature, and the thermal resistance from junction to air (i.e., T A, TJ, JA). Exceeding the
maximum allowable power dissipation will cause the device operating junction temperature to exceed the
maximum +150°C rating. Sustained junction temperatures above +150°C can impact the device reliability.
DS20005745B-page 4 2017-2018 Microchip Technology Inc.
TEMPERATURE SPECIFICATIONS (Note 1)
Parameters Sym. Min. Typ. Max. Units Conditions
Temperature Ranges
Operating Temperature Range
TA –20 — +70 °C Ordering Option E
TA –40 — +85 °C Ordering Option I
TA –40 — +105 °C Ordering Option L
Junction Temperature TJ — — +150 °C —
Storage Temperature Range T S –55 — +150 °C —
Soldering Temperature — — — +260 °C 40 sec. max.
Note 1: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable
junction temperature, and the thermal resistance from junction to air (i.e., T A, TJ, JA). Exceeding the
maximum allowable power dissipation will cause the device operating junction temperature to exceed the
maximum +150°C rating. Sustained junction temperatures above +150°C can impact the device reliability.